UCSB said the team has achieved lasing operation in nonpolar gallium nitride (GaN) semiconductors and demonstrated the world's first nonpolar blue-violet laser diodes. "Our initial results of the first violet nonpolar laser diodes with a low threshold current density demonstrate a high possibility that current c-plane violet laser diodes used for HD-DVD and Blue Ray DVD could soon be replaced with nonpolar violet laser diodes, which require lower operating power and have longer lifetimes," Nakamura said through a statement.
The new blue-violet laser diodes displayed threshold current densities as low as 7.5kA/cm2 clear far-field pattern and a 405 nanometer wavelength. The gallium nitride-based laser diode is based on novel nonpolar orientations of GaN that were pioneered at UC Santa Barbara, according to the university.
"This is a groundbreaking advancement in laser diodes and a major step in solid-state lighting technology," said UCSB Chancellor Henry Yang. "The blue-violet laser will improve high density optical data storage for high definition TV, video discs, and optical sensors, and will also have applications in and long-term benefits for the communication, entertainment, medical, and environmental areas."
Source:
EETimes
Written by: James Delahunty @ 30 Jan 2007 18:55
